학술논문
Defect Noise Spectroscopy Results for GaN Nanowires.
Document Type
Article
Author
Source
Subject
*SPECTRAL energy distribution
*ENERGY levels (Quantum mechanics)
*GALLIUM nitride
*NANOWIRES
*SPECTRUM analysis
*ELECTRIC noise
*ELECTRONS
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Language
ISSN
0094-243X
Abstract
Measurements of the spectral density of the voltage fluctuations of GaN nanowires as a function of temperature are reported. The noise data show the presence of at least three electron trap levels. The activation energies of the defects are calculated from the slope of the characteristic times of the generation-recombination noise components versus inverse temperature. The results show energy levels at approximately Ec-0.3, Ec-0.2, and Ec-0.14 eV respectively. These trapping levels are most likely caused by Nitrogen Vacancy, Carbon and Magnesium sites. [ABSTRACT FROM AUTHOR]