학술논문
Only the chemical state of Indium changes in Mn-doped In3 Sb1 Te2 (Mn: 10 at.%) during multi-level resistance changes.
Document Type
Article
Author
Source
Subject
*INDIUM
*MIST (Atmospheric chemistry)
*SYNCHROTRON radiation
*THIN films
*PHOTOELECTRON spectroscopy
*
*
*
*
Language
ISSN
2045-2322
Abstract
We fabricated and characterized the material with Mn (10 at.%: atomic percent) doped In3Sb1Te2 (MIST) using co-sputtering and synchrotron radiation, respectively. The MIST thin film showed phase-changes at 97 and 320°C, with sheet resistances of ∼10 kΩsq (amorphous), ∼0.2 kΩsq (first phase-change), and ∼10Ωsq (second phase-change). MIST did not exhibit any chemical separation or increased structural instability during either phase-change, as determined with high-resolution x-ray photoelectron spectroscopy. Chemical state changes were only depended for In without concomitant changes of Sb and Te. Apparently, doped Mn atoms can be induced with movement of only In atoms. [ABSTRACT FROM AUTHOR]