학술논문
Liquid phase deposited SiO2 on GaN
Document Type
Article
Author
Source
Subject
*SILICA
*SURFACE coatings
*
Language
ISSN
0254-0584
Abstract
An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO2 films will be characterized. [Copyright &y& Elsevier]