부산대학교 도서관

In this article, a novel 3.3-kV integrated emitter turn-off thyristor (IETO) with single-gate controlling is proposed. Unlike the conventional emitter turn-off thyristor (ETO) using external MOSFETs, the IETO integrates the MOSFETs monolithically to switch ON and OFF. By featuring a P-layer beneath the trench of the carrier store trench bipolar transistor (CSTBT) to form self-biased pMOSs, the IETO clamps the potential of the P-layer, which shields the potential of the N-layer (carrier-stored layer), to reduce the saturation current. Due to the “self-clamping” effect, the high reverse voltage is sustained by the P-layer/N-drift junction, which makes the breakdown voltage (BV) independent of the dose of the N-layer. Then, the N-layer can be heavily doped to reduce VON without sacrificing the BV. TCAD simulation is compared with the CSTBT, which has the same controllability as the IETO and indicates that under the same level of BV, VON of the IETO is reduced by 0.12 V at EOFF ≈ 8.5 mJ/cm2, and the EOFF is 51.1% lower at VON ≈ 1.45 V. Moreover, the saturation current density is also reduced by 12.2%. [ABSTRACT FROM AUTHOR]