부산대학교 도서관

Strong polarity dependent charge trapping effects have been observed in as-deposited SiO[sub 2]/Al[sub 2]O[sub 3] gate stacks with TiN gate electrodes on n- and p-type Si substrates using current–voltage (I–V) and capacitance–voltage (C–V) sensing techniques. For substrate injection, electron trapping occurs mainly in the bulk of the Al[sub 2]O[sub 3], resulting in positive voltage shifts for both I–V and C–V measurements. In the case of gate injection, positive charge trapping near the SiO[sub 2]/Al[sub 2]O[sub 3] interface leads to negative voltage shifts for C–V and positive shifts for I–V measurements. The polarity dependent charging effects are explained in terms of the difference in barrier height for substrate and gate injection and of the inherent asymmetry of the dual layer gate dielectric. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]