학술논문

Spatially resolved characterization of optical and recombination losses for different industrial silicon solar cell architectures.
Document Type
Article
Source
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics. 8/20/2020, Vol. 34 Issue 21, pN.PAG-N.PAG. 14p.
Subject
*SILICON solar cells
*OPTICAL losses
*SOLAR cells
*LIGHT absorption
*QUANTUM efficiency
Language
ISSN
0217-9792
Abstract
In this work, spatially resolved characterization methods are used to identify loss mechanisms for common p -type silicon solar cell architectures, including multicrystalline aluminum back surface field (Al-BSF), monocrystalline Al-BSF, monocrystalline passivated emitter and rear cells (PERC), and bifacial monocrystalline PERC. The characterization methods used in this work include suns- V OC , photoluminescence imaging, and spatially resolved external quantum efficiency and reflectance measurements. The optical and recombination losses are driven by the material properties, cell processing conditions, and device architecture. These losses are quantified and categorized in terms of underlying mechanisms (e.g., front reflectance, escape reflectance, front recombination, and parasitic optical absorption and recombination in the bulk and rear). The ability to create images of these loss parameters can be used to gain more insight into the materials and manufacturing processes used to produce solar cells, and examples are given in this work to illustrate how these images can help reveal the origin of defects. [ABSTRACT FROM AUTHOR]