학술논문
Deuterium interactions with ion-implanted SiO2 layers in silicon.
Document Type
Article
Author
Source
Subject
*DEUTERIUM
*NUCLEAR reactions
*
Language
ISSN
0021-8979
Abstract
Presents a study which investigated the interactions of deuterium gas with implantation-formed Si-SiO[sub2]-Si structures in the temperature range 500-1000 ° centigrade using nuclear-reaction analysis. Experimental procedures; Results of the study; Conclusions.