학술논문
Strain buildup in InxGa1-xAs partially relaxed quantum well.
Document Type
Article
Author
Source
Subject
*GALLIUM arsenide
*INDIUM
*GALLIUM
*ARSENIC
*RAMAN spectroscopy
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Language
ISSN
0021-8979
Abstract
Presents a study which examined partially relaxed In[subx]Ga[sub1-x]As strained-well layers of a fixed thickness above critical, grown on gallium arsenide (GaAs) and capped by GaAs of different thicknesses by Raman spectroscopy in conjunction with Auger electron spectroscopy and secondary ion-mass spectroscopy. Materials and methods used; Overview of gallium arsenide-like optical phonons.