학술논문

Effect of the formation conditions on the properties of ZnO:Ga thin films deposited by magnetron-assisted sputtering onto a cold substrate.
Document Type
Article
Source
Semiconductors. Dec2013, Vol. 47 Issue 13, p1687-1691. 5p.
Subject
*ZINC compounds
*THIN films
*CHEMICAL vapor deposition
*MAGNETRON sputtering
*ARGON
*SUBSTRATES (Materials science)
*SOLAR radiation
Language
ISSN
1063-7826
Abstract
The results of studying ZnO:Ga thin films produced by magnetron-assisted sputtering of the corresponding target in argon and in argon with a 5% hydrogen content without heating of the substrate are reported. It is shown that the resistivity and temporal stability of the ZnO:Ga films substantially depend on their thickness, exposure to solar radiation, and influence of the environment. It is found that doping the ZnO:Ga thin films with hydrogen provides a means for greatly decreasing their resistivity, whereas the degree of temporal stability of the films can be improved using a coating protecting them from the influence of the gas environment. [ABSTRACT FROM AUTHOR]