부산대학교 도서관

In this work, 100 nm-thick boron-doped silicon beams with doping levels between 1 × 1016 and 1 × 1020 cm−3 undergoing uniaxial tensile strain are investigated by Raman spectroscopy. The structures exhibit a noticeable reduction in Young's modulus (∼20%) compared with the value reported for bulk. The traditional Raman shift coefficients used to determine stress and strain in bulk structures are revised, and appropriate corrections are implemented to account for the observed changes in Young's modulus. Interestingly, the Raman shift-strain relation in silicon nanostructures with strain along the [110] direction is found to be independent of size effects and doping. In contrast, the Raman shift-stress relation is found to be highly dependent on size effects. The dependency of the Fano line-shape parameters, used to fit the Raman first order peak in structures with high levels of doping, with strain is also reported. The results are shown to be crucial to accurately determine stress and strain from Raman measurements in doped silicon nanostructures and devices with size effects. [ABSTRACT FROM AUTHOR]