학술논문
Pseudo-metal-base transistor with high gain.
Document Type
Article
Author
Source
Subject
*TRANSISTORS
*ELECTRONICS
*SEMICONDUCTORS
*FULLERENES
*POLYMER networks
*SILICON
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*
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Language
ISSN
0003-6951
Abstract
We use evaporated C60 fullerene as emitter, a conducting polymer blend as base, and Si as collector in a vertical transistor structure similar to a metal-base transistor. The conducting polymer blend used as a base is poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate). The measured common-base current gain of our pseudo-metal-base transistor (p-MBT) is close to 1.0. The p-MBT is straightforward to fabricate and is compatible with conventional Si-based electronics. [ABSTRACT FROM AUTHOR]