학술논문
Position-sensitive photodetector based on hydrogenated amorphous silicon p-i-n junctions.
Document Type
Article
Source
Subject
*DETECTORS
*HETEROJUNCTIONS
*SILICON crystals
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*
Language
ISSN
0034-6748
Abstract
A position-sensitive photodetector is discussed using the transverse photoeffect and a particular geometry in a hydrogenated amorphous silicon (a-Si:H) junction. A comparison with a more conventional device using the lateral photoeffect in a-Si:H is made and it is shown that the new device has better characteristics. [ABSTRACT FROM AUTHOR]