학술논문
Generation of Terahertz Radiation under the Femtosecond Laser Excitation of a Multilayer Structure Based on a-Si:H/a-SiC:H/c-Si.
Document Type
Article
Source
Subject
*SUBMILLIMETER waves
*FEMTOSECOND pulses
*FEMTOSECOND lasers
*COHERENT radiation
*LASER pumping
*CHARGE carriers
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Language
ISSN
0021-3640
Abstract
Coherent terahertz radiation has been generated in p–n heterostructures based on a-Si:H/a-SiC:H/c-Si excited by 800-nm femtosecond laser pulses at room temperature. Terahertz radiation is generated when a reverse bias voltage is applied to heterostructures. The properties of the generated terahertz radiation strongly depend on the bias voltage, which reflects the dynamics of nonequilibrium charge carriers produced by femtosecond laser pump in the heterostructure. [ABSTRACT FROM AUTHOR]