학술논문
Impact ionization and field-enhanced trapping: Fitting current density curves for semi-insulating GaAs.
Document Type
Article
Author
Source
Subject
*THIN films
*ELECTRIC fields
*
Language
ISSN
0021-8979
Abstract
Semi-insulating GaAs samples present N-shaped negative differential conductivity under high-electric fields. This behavior can be associated with two physical processes: Impact ionization (generation) and field-enhanced trapping (recombination), both of which involve trapped and free electrons. We have analyzed the j(E) characteristic curves of a GaAs sample rich in As antisite defects at different conditions of temperature and illumination. The fitting was carried out using an analytical expression for j(E) based on the competition between the above-mentioned processes. Our analysis permits us to identify the temperature and illumination ranges in which those processes are relevant. The best fittings were obtained for measurements between 150 and 200 K and using an infrared photon flux of the order of 10[sup 11] photons/cm² s. [ABSTRACT FROM AUTHOR]