학술논문
ANNEALED TIN SELENIDE (SnSe) THIN FILM MATERIAL FOR SOLAR CELL APPLICATION.
Document Type
Article
Author
Source
Subject
*TIN selenide
*THIN films
*SILICON solar cells
*SOLAR cells
*SEMICONDUCTOR thin films
*BAND gaps
*
*
*
*
*
Language
ISSN
1841-4834
Abstract
The main theme of this work is the synthesis and characterization of SnSe thin film for photovoltaic application. 2-micron Tin Selenide thin film is deposited on clean glass substrate (4cm×4cm) by thermal evaporation technique. The sample is annealed for one hour at a temperature of 350°C. Optical characterization is achieved for the calculation of transmittance, reflection, reflection and absorbance. 1.2 eV band gap is calculated which confirmed the semiconductor nature of thin film. Relatively high resistance (5MO) of the sample is calculated using I-V characteristics. [ABSTRACT FROM AUTHOR]