소장자료
LDR | 02132cam a2200000 a | ||
001 | 0100568280▲ | ||
005 | 20221117175254▲ | ||
007 | ta▲ | ||
008 | 220614s2022 enka b 001 0 eng c▲ | ||
010 | ▼a2021029073▲ | ||
020 | ▼a9781108480024 (hbk.)▲ | ||
020 | ▼z9781108847087 (epub)▲ | ||
035 | ▼a(KERIS)BIB000016214827▲ | ||
040 | ▼aDLC▼beng▼cDLC▼d247017▼d221016▲ | ||
042 | ▼apcc▲ | ||
050 | 0 | 0 | ▼aTK7871.99.M44▼bT38 2022▲ |
056 | ▼a569.47▼26▲ | ||
082 | 0 | 4 | ▼a621.39/5▼223▲ |
090 | ▼a621.395▼bT227f3▲ | ||
100 | 1 | ▼aTaur, Yuan,▼d1946-▲ | |
245 | 1 | 0 | ▼aFundamentals of modern VLSI devices / ▼cYuan Taur, Tak H. Ning.▲ |
250 | ▼a3rd ed.▲ | ||
260 | ▼aUnited Kingdom ; ▼aNew York : ▼bCambridge University Press, ▼c2022.▲ | ||
300 | ▼axxvii, 597 p. : ▼bill. ; ▼c25 cm▲ | ||
504 | ▼aIncludes bibliographical references (p. 565-586) and index.▲ | ||
520 | ▼a"A thoroughly updated third edition of a classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, shortchannel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry"--▼cProvided by publisher.▲ | ||
650 | 0 | ▼aMetal oxide semiconductors, Complementary.▲ | |
650 | 0 | ▼aBipolar transistors.▲ | |
650 | 0 | ▼aIntegrated circuits▼xVery large scale integration.▲ | |
700 | 1 | ▼aNing, Tak H.,▼d1943-▲ |
Fundamentals of modern VLSI devices
자료유형
국외단행본
서명/책임사항
Fundamentals of modern VLSI devices / Yuan Taur, Tak H. Ning.
판사항
3rd ed.
발행사항
United Kingdom ; New York : Cambridge University Press , 2022.
형태사항
xxvii, 597 p. : ill. ; 25 cm
서지주기
Includes bibliographical references (p. 565-586) and index.
요약주기
"A thoroughly updated third edition of a classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, shortchannel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry"-- Provided by publisher.
주제
ISBN
9781108480024 (hbk.)
청구기호
621.395 T227f3
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