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An Extensive Negative Gate Bias Stress Degradation Mechanism in GaN MIS-HEMTs for Aerospace Applications
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Enhancing Characteristics of 1700-V SiC VDMOSFETs: Strategic Integration of Cell Design and Process Optimization
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Transceiver Performance Enhanced Green Micro-LED Based on Pre-Layer Structure Enable Multifunctional Applications in Underwater Visible Light Communication
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Harnessing Geometric Phase Metasurfaces to Double the Field of View in Polarized Structured Light Projection for Depth Sensing
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High Power Short Wavelength Infrared Photonic Crystal Surface Emitting Lasers
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A Recessed Source Contact Technology to Reduce the Specific On-Resistance of Power MOSFET on 4H-SiC
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Analysis of Abnormal C–V Hump on Si3N4 MIS-HEMT With Mesa Isolation Under Negative Gate Bias Stress
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The Transition of Threshold Voltage Shift of Al2O3/Si3N4 AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC
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[AR] Kuo, H.
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neurourology and urodynamics
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european journal of nuclear medicine and molecular imaging
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ieee transactions on electron devices, electron devices, ieee transactions on, ieee trans. electron devices
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