학술논문
Atomic Structure of a Monolayer of Ge on Si(001)(2 × 1)
Document Type
redif-article
Author
Source
World Scientific Publishing Co. Pte. Ltd., Surface Review and Letters (SRL). 5(01):97-100
Subject
Language
English
Abstract
We present results of first-principles pseudopotential calculations for an ordered monolayer growth of Ge on Si(001)(2 × 1). Our results strongly support the asymmetric Ge–Ge dimer model. We also provide a detailed discussion on the nature of the bonding within the overlayer and between the overlayer and the substrate.