학술논문

Bi誘起層交換法によるSn添加n型Geの低温形成 / Low-Temperature Formation of Sn-Doped n-type Ge by Bi-Induced Layer Exchange Crystallization
Document Type
Journal Article
Source
JSAP Annual Meetings Extended Abstracts. 2021, :2646
Subject
17a-Z33-2
GeSn
IV族結晶,IV-IV族混晶
Layer Exchange Crystallization
SiGeSn (GeSn)
semiconductor
半導体
層交換法
結晶工学
Language
Japanese
ISSN
2436-7613