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Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements

Document Type

Article

Author

Martinez, F.; Leyris, C.; Neau, G.; Valenza, M.; Hoffmann, A.; Vildeuil, J.C.; Vincent, E.; Boeuf, F.; Skotnicki, T.; Bidaud, M.; Barge, D.; Tavel, B.

Source

In Microelectronic Engineering 17 June 2005 80:54-57

Subject

Language

ISSN

0167-9317

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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