학술논문
New high sensitivity GaAs Hall devices fabricated by means of stationary domain model
Document Type
Article
Author
Source
In: Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors . (Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, January 1989, 10(1):67-71)
Subject
Language
English
ISSN
02534177