학술논문

Polysilsesquioxane Gate Dielectric Layers Cured by UV Light Irradiation Using Thiol–Ene Reaction for Organic Thin-Film Transistors
Document Type
Article
Source
In: Physica Status Solidi (A) Applications and Materials Science. (Physica Status Solidi (A) Applications and Materials Science, July 2023, 220(13))
Subject
Language
English
ISSN
18626319
18626300