학술논문

Characterisation of PECVD silicon films deposited at 162MHz, using a large area, scalable, multi-tile-electrode plasma source
Document Type
Conference Paper
Source
In: 37th EPS Conference on Plasma Physics 2010, EPS 2010, 37th EPS Conference on Plasma Physics 2010, EPS 2010. (37th EPS Conference on Plasma Physics 2010, EPS 2010, 2010, 3:1984-1987)
Subject
Language
English