학술논문
The InP/GaAsSb type-H heterostructure system and its application to high-speed DHBTs and photodetectors: physics, surprises, and opportunities (INVITED)
Document Type
Conference
Author
Source
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :779-782 2005
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
The InP/GaAsSb/InP "type-II" heterostructure system is of interest for high-speed devices such as photodetectors and double heterostructure bipolar transistors (DHBTs) because its band alignment enables the straightforward injection of electrons from a ~0.72 eV p-type GaAsSb layer into n-type InP without any need for interface grading. We briefly review the salient features of the InP-GaAsSb system, and consider some of the surprising device characteristics encountered in InP/GaAsSb -based devices. In several respects, the InP/GaAsSb system is shown to offer very appealing opportunities for the development of high-speed NpN DHBTs with ultrathin base and collector layers