학술논문
Improvement in short circuit current of p-i-n solar cell with silicon quantum dot superlattice structure by optimizing SiNx thickness
Document Type
Conference
Source
2012 38th IEEE Photovoltaic Specialists Conference Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE. :000810-000814 Jun, 2012
Subject
Language
ISSN
0160-8371
Abstract
Superlattice consisting of 10 alternate layers of a-Si with QDs and SiN x are incorporated as i-layer in a p-i-n solar cell using HWCVD method. Superlattice with QDs showed absorption coefficient in the range of ∼10 5 –10 4 cm −1 . Calculated optical bandgap of the SL with QDs (∼1.84 eV) is higher than the SL without QDs (∼1.79 eV) and this is attributed to QCE. The cells with QDs showed I SC = 1.806 µA and V OC = 25 mV. Increase in I SC of cells is attributed to increase in tunneling current due to decrease in SiN x thickness. Low V OC has been attributed to the thin SiN x layers, the defects and the interface states which result in recombination.