학술논문
Bandgap Engineering of GaAsBi Alloy for Emission of up to 1.52 µm
Document Type
Conference
Source
2018 IEEE International Conference on Semiconductor Electronics (ICSE) Semiconductor Electronics (ICSE), 2018 IEEE International Conference on. :177-179 Aug, 2018
Subject
Language
Abstract
Band gap engineering by incorporating bismuth (Bi) into GaAs to form ternary GaAs 1-x Bi x alloy was investigated. Series of GaAsBi samples with different Bi concentrations were grown by molecular beam epitaxy. Based on the high resolution X-ray diffraction (HR-XRD) measurements, Bi concentration of up to 0.108 was successfully incorporated into the lattice. Sample with the highest Bi concentration, GaAs 0. 892 Bi 0.108 , show room temperature photoluminescence (PL) emission with a peak wavelength of 1.52 µm and full-width-at-half-maximum (FWHM) of 89 meV. It was found that the incorporation of Bi into GaAs lattice affected both the conduction band as well as the valence band. The conduction band minimum reduces linearly by 23 meV/%Bi while the valence band maximum was best fitted by using the valence band anti-crossing (VBAC) model with coupling parameter, C Bi of 1.65 eV.