학술논문

Nanostructured Films of Bi2SeO5 Deposited by Pulsed Laser Ablation
Document Type
Conference
Source
2022 19th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) Electrical Engineering, Computing Science and Automatic Control (CCE), 2022 19th International Conference on. :1-6 Nov, 2022
Subject
Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
Robotics and Control Systems
Semiconductor device measurement
Heat treatment
Photonic band gap
Morphology
Programmable logic arrays
Glass
Pulsed laser deposition
Oxicalcogenuros
Bi2SeO5
transparent semiconductors
PLA
Language
ISSN
2642-3766
Abstract
Nanostructured Bi2SeO5 films were deposited on soda-lime glass substrates by the pulsed laser ablation technique, PLA, using a target manufactured from powders synthesized by solid-state reaction, starting from a stoichiometric mixture of the precursors, Bi 2 O 3 and Se. The films, with a thickness of 250 nm and subsequent heat treatment at 550 and 600 °C, present a flake-like nanostructured morphology. From the indexing of the X-ray diffractogram, the obtaining of an orthorhombic structure is confirmed. Morphological characterization was performed using SEM and AFM microscopy. The flake-shaped particles presented thicknesses between 20 and 30 nm and the average roughness measured was 15 nm. From the UV-Vis transmittance spectra, average optical transmittances were obtained in the visible region of the order of 60 % and bandgap magnitudes of 3.3 to 3.7 eV were estimated.