학술논문

Single-Ferroelectric FET based Associative Memory for Data-Intensive Pattern Matching
Document Type
Conference
Source
2024 25th International Symposium on Quality Electronic Design (ISQED) Quality Electronic Design (ISQED), 2024 25th International Symposium on. :1-7 Apr, 2024
Subject
Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
General Topics for Engineers
Photonics and Electrooptics
Robotics and Control Systems
Measurement
Associative memory
Sequential analysis
Nonvolatile memory
Threshold voltage
Cams
Hamming distances
content addressable memory
ferroelectric field effect transistor
associative memory
pattern matching
Language
ISSN
1948-3295
Abstract
Content addressable memories (CAMs) embeds parallel associative search directly into the memory blocks, thus finding widespread utility in associative memory (AM) related applications. To accommodate increasing demands of data-intensive search tasks, various efforts have been devoted to enhancing CAM density. These endeavors include the use of non-volatile memory (NVM) devices with compact structures and capitalizing on the multi-level cell (MLC) characteristics of NVM devices. In this work, we present a novel single-FeFET based CAM design, complemented by a 2-step search scheme. This design achieves ultra-compact storage density and supports dual CAM operations: binary/ternary CAM search for Hamming distance computations and multi-bit CAM for exact associative searches. Both binary/ternary CAM and multi-bit CAM operations have been illustrated and validated, and the area per bit, search latency and energy metrics have been evaluated at array level. In genome sequencing applications using hyperdimensional computing paradigm, our single-FeFET based AM engine achieves $89.9\times/71.9\times$ speedup and $66.5\times/30.7\times$ energy efficiency improvement over GPU implementations.