학술논문
Tunneling Attenuation and Leakage Current in MoS2 Nanoribbon MOSFETs
Document Type
Conference
Author
Source
2023 46th MIPRO ICT and Electronics Convention (MIPRO) ICT and Electronics Convention (MIPRO), 2023 46th MIPRO. :163-167 May, 2023
Subject
Language
ISSN
2623-8764
Abstract
We study the OFF-state leakage current in quasi-one-dimensional MoS 2 nanoribbon (MoS 2 NR) FETs using ab initio Hamiltonians and quantum transport simulations based on Green’s functions. Complex band structure is computed for these devices and the energy-dependent tunneling attenuation inside the bandgap is obtained. We investigate the tunneling component of the OFF-state leakage for sub-20 nm long and sub-3 nm wide MoS 2 NR FETs, using the under-the-barrier (UTB) and top-of-the-barrier (ToB) ballistic models. We report that using the parabolically-approximated attenuation overestimates the OFF-state leakage significantly. Furthermore, we demonstrate that all MoS 2 NR FETs show good tunneling suppression due to high attenuation even for the shortest devices where the OFF-state leakage is under 16.5 nA/μm for nFETs and lower than 22 nA/μm for pFETs.