부산대학교 도서관

Power components such as High Electron Mobility Transistors (HEMTs) are used for high power and high frequency applications. These tend to overheat and destroy their packaging and connections to the wire bondings. This paper presents planar micro-thermoelectric sensors ( $\mu $ TESs) developed to measure partial heat flow dissipated by the HEMTs to avoid the HEMTs from reaching critical temperatures. These sensors use the same active materials as well as the same fabrication process as the HEMTs, enabling them to be fabricated simultaneously for a simple integration. The HEMTs’ active layers consist in AlGaN/GaN heterostructures resulting in the formation of a 2D Electron Gas (2DEG) at the interface. Tension factors of 47 mV/(K.mm2) were obtained with these sensors and heat flows of 0.2 W to 7 W were measured.