학술논문
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT
Document Type
Conference
Author
Source
2019 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2019 IEEE International. :1-6 Mar, 2019
Subject
Language
ISSN
1938-1891
Abstract
In this paper, we explore the influence of the fully recessed gate length on threshold voltage instabilities. The study has been performed by the use of ultra-fast pBTI measurements on GaN-on-Si E-mode MOSc-HEMTs, as well as TCAD simulations. It reveals that gate length reduction tends to decrease the pBTI degradation. Transient analyses (degradation/relexation) reveal same dynamics whatever the gate length while the value of the initial V TH directly influences BTI. TCAD simulations highlight that the full recess gate configuration creates a short-channel effect responsible for this peculiar Vth degradation.