학술논문
On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes
Document Type
Conference
Author
Source
2017 47th European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2017 47th European. :126-129 Sep, 2017
Subject
Language
ISSN
2378-6558
Abstract
Cathode related current collapse effect in GaN on Si SBDs (Schottky Barrier Diode) is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-VDP (Van Der Pauw) are associated with temperature dependent dynamic R on transients analysis showing that the main part of the current collapse at the cathode comes from a combination of electron trapping in the passivation layer and in a carbon related hole trap in the GaN buffer layers (Ea = E t − E v ∼ 0.9eV). These two parasitic effects can lead to long recovery time (> 1ks) after reverse bias stress.