학술논문

Multi-wafer growth and processing of 0.6-eV InGaAs monolithic interconnected modules
Document Type
Conference
Source
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Photovoltaic specialists conference 2002 Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE. :888-891 2002
Subject
Photonics and Electrooptics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Indium gallium arsenide
Plasma temperature
Process design
Manufacturing processes
Doping
Plasma measurements
Temperature control
Production
Substrates
Plasma applications
Language
Abstract
Recent progress in the optical and electrical performance of monolithic interconnected modules (MIMs) has produced an interest in manufacturing large quantities of cells for evaluation. Information resulting from this evaluation is necessary to produce and optimize a TPV system, where a large number of devices with a nominal performance must be available for insertion into series/parallel electrical networks. In this work over 130 wafers comprising three different device designs were grown, with representative wafers from each design processed in a pilot-line manufacturing environment. This paper describes the material growth, device design and processing, and electrical performance of these cells.