학술논문
A New Interference Phenomenon in Sub-60nm Nitride-Based Flash Memory
Document Type
Conference
Author
Source
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE. :81-82 Aug, 2007
Subject
Language
ISSN
2159-483X
2159-4864
2159-4864
Abstract
It is the first time to disclose that the similar interference from adjacent wordlines as found in floating-gate flash memory also exists in nitride-based flash memory. For sub-60nm nitride-based flash technologies, this interference effect cannot be ignored any more and should be well taken into consideration when defining the operation window of the memory products.