학술논문
Deep plasma etching process investigation of polyimide materials for forming interlayer connections in microelectronic nodes
Document Type
Conference
Author
Source
2014 IEEE 34th International Scientific Conference on Electronics and Nanotechnology (ELNANO) Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on. :54-57 Apr, 2014
Subject
Language
Abstract
Research results of ion — initiated etching processes of polymer films based on polyimide in oxygen plasma, sulfur hexafluoride and oxygen-argon mixtures of low pressure (around 10–12 Pa) have been shown. Operating modes of deep plasma chemical polyimide etching have been established using IDP TM RHS 100 installation. Optimal values of main technological parameters: etching rate − 0.8 μm/min, sample etching uniformity-not less than 92%; anisotropy − 0.95 have been determined.