학술논문
Low Hysteresis and High Stability in Tunneling Magnetoresistance Vortex Sensors With a Composite Free Layer
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(7):1289-1292 Jul, 2024
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
The linearity of tunneling magnetoresistance (TMR) sensors is challenging due to the intrinsic magnetic hysteresis of the ferromagnetic Co-Fe-B layer used as the free layer. In this work, by using a composite free layer of Co-Fe-B/Ta/Co-Fe-Si-B with optimized geometric, we demonstrate vortex magnetic states in TMR sensors with large magnetic tunneling junctions, leading to low hysteresis and high stability under external magnetic fields, with a sensitivity of 6 mV/V/Oe (0.6% Oe $^{-{1}}$ ) and a nonlinearity below 0.5% FS within ±20 Oe. TMR vortex sensors with a composite free layer could be potentially useful in high precision current sensing in harsh environment.