학술논문
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm
Document Type
Conference
Author
Subhechha, S.; Rassoul, N.; Belmonte, A.; Hody, H.; Dekkers, H.; van Setten, M. J.; Chasin, A.; Sharifi, S.H.; Sutar, S.; Magnarin, L.; Celano, U.; Puliyalil, H.; Kundu, S.; Pak, M.; Teugels, L.; Tsvetanova, D.; Bazzazian, N.; Vandersmissen, K.; Biasotto, C.; Batuk, D.; Geypen, J.; Heijlen, J.; Delhougne, R.; Kar, G. S.
Source
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :292-293 Jun, 2022
Subject
Language
ISSN
2158-9682
Abstract
To address the requirements of 2T0C 3D-DRAMs, raised source/drain architecture for front-gated amorphous IGZO-TFTs is demonstrated. Record I on (> 30 µA/µm) with V t of +0.3 V is achieved with scaled a-IGZO channel and CAAC-IGZO raised contacts along with the oxygen tunnel module. The role of raised contacts on device performance is systematically investigated. We also report ultra-low I off ~ 4×10 -19 A/µm for raised contact devices.