학술논문
Sub-µm a-IGZO, Fully integrated, Process improved, Vertical diode for Crosspoint arrays
Document Type
Conference
Author
Source
2020 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2020 IEEE International. :1-4 May, 2020
Subject
Language
ISSN
2573-7503
Abstract
For the first time at our knowledge, we demonstrate a sub-µm indium-gallium-zinc oxide (a-IGZO) (vertical) Schottky diodes on a 300mm platform. We demonstrate that the choice of a suitable Al2O3-based encapsulation layer is critical in order to achieve near-ideal diode parameters (n, φSBH) and uniform wafer-level behavior. We show, for the smallest devices of 0.5µm x 0.5µm, an ideality factor n of 1.5 and Schottky barrier height (φSBH) of 0.7 eV while simultaneously achieving a peak current density of 0.1 MA/cm 2 .