학술논문

In-Situ Encrypted NAND FeFET Array for Secure Storage and Compute-in-Memory
Document Type
Conference
Source
2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Subject
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Ciphers
Voltage measurement
Pulse measurements
Current measurement
Logic gates
Encryption
FeFETs
Language
ISSN
2156-017X
Abstract
In this work, we present a lightweight in-situ encryption/decryption technique for high-density NAND memory, aiming to meet the growing need for data privacy and security in storage and computing applications. Using ferroelectric FET (FeFET) as a technology platform for demonstration, we show that: i) using a XOR-based cipher, the encryption/decryption can be simply mapped to in-situ array operations, where the encrypted cipher texts are stored as complementary threshold voltage (V TH ) states of two consecutive FeFETs in a NAND string and decryption can be simply realized through read operations with key-dependent read gate biases; ii) the proposed technique is scalable to multi-level cells (MLC) by encrypting and decrypting bit-by-bit, thereby significantly increasing the encrypted memory density; iii) a unique advantage of applying XOR-based cipher on NAND array is its capability of supporting high-density and secure compute-in-memory (CiM) (e.g., matrix vector multiplication) with encrypted weights, which is beyond the capability of conventional advanced encryption standard (AES) engine; iv) with integrated NAND FeFET array, we have successfully demonstrated encryption and decryption operations of single-level cell (SLC), MLC, and CiM, showing great promise of the technique.