부산대학교 도서관

AlInN/GaN on Si high-electron mobility transistors (HEMTs) are irradiated with various fluences of 75-MeV sulfur ions to study the radiation-induced degradation mechanisms. Heavy-ion irradiation has been found to reduce saturation ON- and OFF-state current and, at higher fluence, to induce a large positive threshold voltage shift. Irradiated structures reveal a consistent carrier density and mobility reduction as a function of fluence. To demonstrate the buffer-induced threshold shift, a series of samples with various GaN channel layer thicknesses defined by carbon-doped GaN buffer layers are characterized. By comparison of the threshold voltage of nonirradiated devices with reduced channel layer thickness, we assign the observed effects mainly to carrier depletion. Thus, formation of acceptor-like traps upon irradiation is concluded as primary degradation mechanism in GaN-based HEMTs. AlInN/GaN HEMT structures are, therefore, more tolerant to heavy-ion irradiation than AlGaN/GaN transistors as their intrinsic channel conductivity is higher.