학술논문

CMOS-Free Magnetic Domain Wall Leaky Integrate-and-Fire Neurons with Intrinsic Lateral Inhibition
Document Type
Conference
Source
2020 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2020 IEEE International Symposium on. :1-5 Oct, 2020
Subject
Components, Circuits, Devices and Systems
Neurons
Anisotropic magnetoresistance
Tracking
Magnetization
Magnetic tunneling
Switches
Couplings
Artificial neuron
leaky integrate-and-fire (LIF) neuron
magnetic domain wall (DW)
neural network crossbar
neuromorphic computing
three-terminal magnetic tunnel junction (3T-MTJ)
Language
ISSN
2158-1525
Abstract
Spintronic devices, especially those based on motion of a domain wall (DW) through a ferromagnetic track, have received a significant amount of interest in the field of neuromorphic computing because of their non-volatility and intrinsic current integration capabilities. Many spintronic neurons using this technology have already been proposed, but they also require external circuitry or additional device layers to implement other important neuronal behaviors. Therefore, they result in an increase in fabrication complexity and/or energy consumption. In this work, we discuss three neurons that implement these functions without the use of additional circuitry or material layers.