학술논문
FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory
Document Type
Conference
Author
Chang, S. -C.; Haratipour, N.; Shivaraman, S.; Neumann, C.; Atanasov, S.; Peck, J.; Kabir, N.; Tung, I. -C.; Liu, H.; Krist, B.; Oni, A.; Sung, S.; Doyle, B.; Allen, G.; Engel, C.; Roy, A.; Hoff, T.; Li, H.; Hamzaoglu, F.; Bristol, R.; Radosavljevic, M.; Turkot, B.; Metz, M.; Young, I.; Kavalieros, J.; Avci, U.
Source
2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :33.2.1-33.2.4 Dec, 2021
Subject
Language
ISSN
2156-017X
Abstract
This paper demonstrates industry-best hafnium-based FeRAM performance and reliability by showing (i) read/write speed scaled down to ~2ns, (ii) read/write endurance beyond 10 12 cycles, and (iii) tail-bit variations of scaled capacitors working at $4\sigma$ across a 300mm wafer at elevated temperature, by switching anti-ferroelectric (AFE) capacitors at −1.6V and 1.2V. Furthermore, a physics-based multi-domain compact circuit model is developed for AFE capacitors to describe FeRAM operations. Array-level circuit simulations show that FeRAM is less vulnerable to disturb through parasitic capacitor coupling due to the small amount of polarization charge change $(\Delta P)$ relative to its high remanent polarization $(P_{r})$. Finally, high yield in a capacitor-array with no significant degradation in retention well over 10s and a healthy memory window (MW) under 1ms disturb 20% of $V_{write}$ at elevated temperature is shown, paving way for AFE-based FeRAM toward the next generation high-speed and high-density embedded memory.