학술논문
Active-source-pump (ASP) technique for ESD design window expansion and ultra-thin gate oxide protection in sub-90nm technologies
Document Type
Conference
Author
Source
Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571) Custom integrated circuists Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004. :251-254 2004
Subject
Language
Abstract
This paper presents a novel active-source-pump (ASP) circuit technique to significantly lower the ESD sensitivity of ultrathin gate inputs in advanced sub-90nm CMOS technologies. As demonstrated by detailed experimental analysis, an ESD design window expansion of more than 100% can be achieved. This revives conventional ESD solutions for ultrasensitive input protection also enabling low-capacitance RF protection schemes with a high ESD design flexibility at IC-level. ASP IC application examples, and the impact of ASP on normal RF operation performance, are discussed.