학술논문
Impact of Device Geometry, Physical Doping and Electrostatic Doping on the Frequency CV-dispersion of TFT Devices with IWO Channels
Document Type
Conference
Author
Source
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2023 7th IEEE. :1-3 Mar, 2023
Subject
Language
Abstract
Using combined experimental and modeling techniques, we analyze nonidealities in the oxide semiconductor channel devices. We focus on the IWO-based TFTs (fabricated in BEOL) with excellent switching properties and deconvolute frequency dispersion of CV/GV, observed under different measurement condition and attribute it to the non-idealities in the S/D extension and electrostatic doping impacting the TFT’s response. Finally, we show importance of physical doping in suppression of the observed dispersion.