부산대학교 도서관

Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about whether the replacement of Si-base with Germanium Carbide(GeC) will also have good performance. This work explains the heat transfer of GeC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a potential 4H-GeC power MOSFET with wide bandgap and high thermal conductivity to replace Si-MOSFETs.
Comment: 2 pages, 2 figures, Symposium on Nano-Device Circuits and Technologies, SNDCT 2023