학술논문
20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer
Document Type
Working Paper
Author
Zambito, S.; Milanesio, M.; Moretti, T.; Paolozzi, L.; Munker, M.; Cardella, R.; Kugathasan, T.; Martinelli, F.; Picardi, A.; Elviretti, M.; Rücker, H.; Trusch, A.; Cadoux, F.; Cardarelli, R.; Débieux, S.; Favre, Y.; Fenoglio, C. A.; Ferrere, D.; Gonzalez-Sevilla, S.; Iodice, L.; Kotitsa, R.; Magliocca, C.; Nessi, M.; Pizarro-Medina, A.; Iglesias, J. Sabater; Saidi, J.; Pinto, M. Vicente Barreto; Iacobucci, G.
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Subject
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Abstract
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 {\mu}m thick epilayer of 350 {\Omega}cm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel matrix show that the sensor has a 130 V wide bias-voltage operation plateau at which the efficiency is 99.8%. Although this prototype does not include an internal gain layer, the design optimised for timing of the sensor and the front-end electronics provides a time resolutions of 20 ps.
Comment: 11 pages, 11 figures
Comment: 11 pages, 11 figures