학술논문
All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
Document Type
Working Paper
Author
Bourdet, Léo; Hutin, Louis; Bertrand, Benoit; Corna, Andrea; Bohuslavskyi, Heorhii; Amisse, Anthony; Crippa, Alessandro; Maurand, Romain; Barraud, Sylvain; Urdampilleta, Matias; Bäuerle, Christopher; Meunier, Tristan; Sanquer, Marc; Jehl, Xavier; De Franceschi, Silvano; Niquet, Yann-Michel; Vinet, Maud
Source
IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 11 , Nov. 2018 )
Subject
Language
Abstract
We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range.
Comment: arXiv admin note: substantial text overlap with arXiv:1912.09806
Comment: arXiv admin note: substantial text overlap with arXiv:1912.09806