부산대학교 도서관

This paper used graphene oxide (GO) thin films for resistive random access memory (RRAM) applications. The Al/GO/Al structure was fabricated to investigate its electrical properties in the atmosphere. This structure can be resistively switched by applied voltages at different polarities. The switching characteristics by the negative operating shows poor stability, which is due to the thicker interface layer at the bottom electrode. The GO water solution and baking process caused a thicker AlO_x interface layer. Hence, it is hard to store oxygen ions and thus shows poor switching behavior. Due to the thinner upper interface layer, the store and release of oxygen ions were controlled by the GO layer. Thus, the switching behavior by the positive operating was more stable. The endurance characteristics by the positive operating was more than 10^3 cycles. The retention by the positive operating was more than 10^4 s at room temperature. However, the Al/GO/Al structure in vaporless environment shows no resistive switching phenomenon, which indicates that water molecules strongly influences the resistive switching mechanism.