학술논문
Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering.
Document Type
Article
Author
Source
Subject
*X-ray diffraction
*SYNCHROTRONS
*X-ray diffraction measurement
*CRYSTAL structure
*SINGLE crystals
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Language
ISSN
0022-2461
Abstract
In situ thermal annealing (673-1273 K) during X-ray diffraction synchrotron measurements was performed to monitor the strain level as a proxy to follow the recovery of 300 keV Ar ion irradiated 4H-SiC single crystals. Results show that, when exposed to Ar ions at a fluence of 6.7 × 10 14 ions/cm 2 (0.7 dpa), the material suffers a maximum strain of 12 % that reduces to 2 % after the final anneal at 1273 K. In the same time, the disorder derived from the XRD data also demonstrates a thermal recovery of the crystalline structure. Hence, this work presents ion irradiation as a means to induce specific crystalline order and depth-controlled strain states within a few 100 s of nm window in 4H-SiC. [ABSTRACT FROM AUTHOR]