부산대학교 도서관

The article presents a study aimed to determine the optimum conditions for whisker growth as the first step of the novel chemical vapor infiltration process. When the process temperature and the input gas ratio were varied, there were three different regions, namely film growth region, whisker growth region, and nearly non-deposition region in which the microstructures differ from those produced with the other conditions. The process conditions for whisker growth were discovered and confirmed to be very limited. In addition, it was found that both the whisker growth and the matrix filling process occurred during the whisker growth process under very specific conditions. This result will play an important role in reducing the process time in the SiC/SiC composite fabrication process.